OPHIR RF BROADBAND AMPLIFIER MODULE
|
|
MANUFACTURER PART# |
5303021
|
View large schematic.
500 - 1000 MHz
20 WATTS
HIGH POWER
RF AMPLIFIER
|
|
ABERDEEN PART# |
RF508
|
FREQUENCY
RANGE |
500 - 1000 MHz (Minimum)
Specifications @ VCC=28 VDC, Temp=25°C
|
|
POWER OUTPUT |
CW: 20 Watts (Typical)
@ 1dB comp: 13 Watts (Minimum)
|
THIRD ORDER
INTERCEPT POINT
|
+49 dBm
(Typical)
|
|
SMALL SIGNAL |
Gain: 44 dB (Minimum)
Gain Flatness: ±1.5 dB (Maximum)
|
|
INPUT VSWR
|
2:1 (Maximum)
|
|
DC INPUT POWER
|
3 Amp (Maximum)
|
INPUT/OUTPUT
CONNECTORS
|
SMA
Female
|
|
PHYSICAL CHARACTERISTICS
|
Dimensions: 6.0" x 2.75" x 0.8" (Maximum)
Weight: 1.0 lb. (Maximum)
|
ELECTRICAL
CHARACTERISTICS
|
Impedance Input/output: 50 Ohm
DC Input: 28 VDC nominal
Input Signal Format: CW/AM/FM/PM/Pulse
Harmonics: -25 dBc typical at 1 dB comp.
Spurious Signals: > -60 dBc
Class of Operation: A linear
Load VSWR Mismatch Tolerance 10:1 no damage
|
ENVIRONMENTAL
CHARACTERISTICS
|
Baseplate Temperature: 0°C to +50°C
Humidity: 95% relative without condensation
Altitude: 10,000 feet
|
| |
DESCRIPTION:
Designed for Wide-band High Power applications in the 500 to 1000 MHz frequency range. This amplifier utilizes class A Silicon RF Power MOSFET devices that provide high gain, wide dynamic range and good linearity. High efficiency and reliable operation are being achieved by employing unique RF networks, custom machined housing and heavy duty components. Each unit undergoes extensive burn-in prior to final test and Q/A.
|
| |
|
|
